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HL6512MG
Visible High Power Laser Diode
Description
The HL6512MG is a 0.65 m band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. Its beam divergence (parallel to the junction) has a small variation to the optical output power. It is suitable as light sources for laser scanners and optical equipment for measurement. ODE-208-042A (Z) Rev.1 Oct. 20, 2006
Features
* High output power and Wide operating temperature: 70 mW (pulse), PW = 100ns, duty = 50%, (Topr = 70C) * Small package : 5.6 mm * Visible light output : p = 658 nm Typ * The beam divergence (parallel to the junction) has a small variation to the output power. * Single longitudinal mode
Package Type * HL6512MG: MG
Internal Circuit
1 3
LD
2
Absolute Maximum Ratings
(TC = 25C)
Item Optical output power Pulse optical output power Laser diode reverse voltage Operating temperature Storage temperature Symbol PO PO(pulse) VR(LD) Topr Tstg Ratings 50 1 70 * 2 2 -10 to +70 * -40 to +85 Unit mW mW V C C
Notes: 1. Pulse condition : Pulse width = 100 ns, duty = 50% 2. The value of -10 to +70C is effective under pulse operation. The value under CW operation is -10 to +60C.
Optical and Electrical Characteristics
(TC = 25C)
Item Threshold current Operating current Operating voltage Beam divergence parallel to the junction Beam divergence perpendicular to the junction Astigmatism Lasing wavelength Symbol Ith Iop VOP // AS p Min 30 -- 2.1 7 18 -- 655 Typ 45 115 2.6 8.5 21 5 658 Max 60 135 3.0 11 26 -- 662 Unit mA mA V m nm Test Conditions -- PO = 50 mW PO = 50 mW PO = 50 mW PO = 50 mW PO = 5 mW, NA = 0.55 PO = 50 mW
Rev.1 Oct. 20, 2006 page 1 of 4
HL6512MG
Typical Characteristic Curves
Optical Output Power vs.Forward Current 50 TC = 25C 40 30 20 10 0 TC = 0C TC = 60C Pulse Optical Output Power vs. Forward Current 80 TC = 25C 60 TC = 0C
Optical output power, PO (mW)
Optical output power, PO (mW)
40
TC = 70C
20 Pw = 100ns duty = 50% 0 0 50 100 150 200 250
0
40
80
120
160
200
Forward current, IF (mA)
Forward current, IF (mA)
Threshold Current vs. Case Temperature 100
Slope efficiency, S (mW/mA) Threshold current, Ith (mA)
Slope Efficiency vs. Case Temperature 1.0 0.8 0.6 0.4 0.2 0
50
30
10
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
Case temperature, TC (C)
Case temperature,TC (C)
Wavelength vs. Case Temperature 675
Lasing Wavelength, p (nm)
Far Field Pattern 1.0 PO = 50mW TC = 25C 0.8
Relative intensity
PO = 50mW 670 665 660 655 650
Perpendicular
0.6 0.4 Parallel 0.2 0 -40 -30 -20 -10 0
0
10
20
30
40
50
60
70
10 20 30 40
Case temperature, TC (C)
Angle, ( )
Rev.1 Oct. 20, 2006 page 2 of 4
HL6512MG
Package Dimensions
As of July, 2002
Unit: mm
0.4 +0.1 -0
5.6 +0 -0.025 1.0 0.1 (0.4)
1.6 0.2
2.3 0.2
0.25
Glass
4.1 0.3 3.55 0.1
1.2 0.1
6.5 1.0
3 - 0.45 0.1 1 2 3
1 2
3 2.0 0.2
OPJ Code JEDEC JEITA Mass (reference value)
1.27
(90)
Emitting Point
LD/MG -- -- 0.3 g
Rev.1 Oct. 20, 2006 page 3 of 4
HL6512MG
Cautions
1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. OPJ bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. OPJ makes every attempt to ensure that its products are of high quality and reliability. However, contact our sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by OPJ particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. OPJ bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating OPJ product does not cause bodily injury, fire or other consequential damage due to operation of the OPJ product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from OPJ. 7. Contact our sales office for any questions regarding this document or OPJ products. 1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent. 2. This product contains gallium arsenide (GaAs), which may seriously endanger your health even at very low doses. Please avoid treatment which may create GaAs powder or gas, such as disassembly or performing chemical experiments, when you handle the product. When disposing of the product, please follow the laws of your country and separate it from other waste such as industrial waste and household garbage. 3. Definition of items shown in this CAS is in accordance with that shown in Opto Device Databook issued by OPJ unless otherwise specified.
Sales Offices
Device Business Unit Opnext Japan, Inc.
Takagi Bldg., 3F, 1-3-9, Iwamoto-cho, Chiyoda-ku, Tokyo 101-0032 Japan Tel: (03) 3865-5591
For the detail of Opnext, Inc., see the following homepage:
Japan (Japanese) Other area (English) http://www.opnext.com/jp/products/ http://www.opnext.com/products/ (c)2007 Opnext Japan, Inc., All rights reserved. Printed in Japan.
Colophon 2.0
Rev.1 Oct. 20, 2006 page 4 of 4

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